MSC360SMA120S Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET SIC 1200 V 360 MOHM TO-26
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 1000 V
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.26 EUR |
| 25+ | 12.21 EUR |
| 100+ | 10.65 EUR |
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Technische Details MSC360SMA120S Microchip Technology
Description: MOSFET SIC 1200 V 360 MOHM TO-26, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V, Power Dissipation (Max): 82W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-268, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 1000 V.
Weitere Produktangebote MSC360SMA120S
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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MSC360SMA120S | MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; SMA Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 8A Power dissipation: 71W Case: D3PAK; TO268 On-state resistance: 0.45Ω Mounting: SMD Gate charge: 21nC Kind of channel: enhancement Manufacturer standard package: 30pcs. Pulsed drain current: 27A Kind of package: tube Family: SMA |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MSC360SMA120S |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; SMA
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Power dissipation: 71W
Case: D3PAK; TO268
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhancement
Manufacturer standard package: 30pcs.
Pulsed drain current: 27A
Kind of package: tube
Family: SMA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; SMA
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 8A
Power dissipation: 71W
Case: D3PAK; TO268
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 21nC
Kind of channel: enhancement
Manufacturer standard package: 30pcs.
Pulsed drain current: 27A
Kind of package: tube
Family: SMA
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)