MSC360SMA120S MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; SMA
Mounting: SMD
Case: D3PAK; TO268
Kind of package: tube
Gate charge: 21nC
On-state resistance: 0.45Ω
Drain current: 8A
Pulsed drain current: 27A
Power dissipation: 71W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Technology: SiC
Type of transistor: N-MOSFET
Family: SMA
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 67 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 9.07 EUR |
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Technische Details MSC360SMA120S MICROCHIP TECHNOLOGY
Description: MOSFET SIC 1200 V 360 MOHM TO-26, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V, Power Dissipation (Max): 82W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-268, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 1000 V.
Weitere Produktangebote MSC360SMA120S nach Preis ab 8.64 EUR bis 10.75 EUR
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MSC360SMA120S | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 8A; Idm: 27A; 71W; SMA Mounting: SMD Case: D3PAK; TO268 Kind of package: tube Gate charge: 21nC On-state resistance: 0.45Ω Drain current: 8A Pulsed drain current: 27A Power dissipation: 71W Drain-source voltage: 1.2kV Kind of channel: enhancement Technology: SiC Type of transistor: N-MOSFET Family: SMA Polarisation: unipolar |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC360SMA120S | Hersteller : Microchip Technology |
Description: MOSFET SIC 1200 V 360 MOHM TO-26 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-268 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 1000 V |
auf Bestellung 196 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSC360SMA120S | Hersteller : Microchip Technology |
MOSFET SIC 1200 V 360 mOhm TO-268 |
Produkt ist nicht verfügbar |
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| MSC360SMA120S | Hersteller : Microchip Technology |
MOSFET SIC 1200 V 360 mOhm TO-268 |
Produkt ist nicht verfügbar |