MSC360SMA120SA Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET SIC 1200 V 360 MOHM TO-26
Packaging: Tube
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.14V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.82 EUR |
| 25+ | 9.06 EUR |
| 100+ | 7.88 EUR |
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Technische Details MSC360SMA120SA Microchip Technology
Description: MOSFET SIC 1200 V 360 MOHM TO-26, Packaging: Tube, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 20V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 3.14V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 1000 V.
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| MSC360SMA120SA | Hersteller : Microchip Technology |
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| MSC360SMA120SA | Hersteller : Microchip Technology |
MOSFET SIC 1200 V 360 mOhm TO-263-7 |
Produkt ist nicht verfügbar |