Technische Details MSCSM120DUM027AG Microchip Technology
Description: PM-MOSFET-SIC-SP6C, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual) Common Source, Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 2968W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 733A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V, Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V, Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 9mA, Part Status: Active.
Weitere Produktangebote MSCSM120DUM027AG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MSCSM120DUM027AG | Hersteller : Microchip Technology |
 Dual Common Source SiC MOSFET Power Module |
Produkt ist nicht verfügbar |
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| MSCSM120DUM027AG | Hersteller : Microchip Technology |
Description: PM-MOSFET-SIC-SP6C Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2968W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 733A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Part Status: Active |
Produkt ist nicht verfügbar |