MSCSM120DUM11T3AG Microchip Technology
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1067W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Supplier Device Package: SP3F
Part Status: Active
Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1067W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Supplier Device Package: SP3F
Part Status: Active
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Technische Details MSCSM120DUM11T3AG Microchip Technology
Description: PM-MOSFET-SIC-SP3F, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual) Common Source, Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1067W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 254A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V, Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V, Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 3mA, Supplier Device Package: SP3F, Part Status: Active.