MSCSM120HM31TBL2NG Microchip Technology
Hersteller: Microchip TechnologyDescription: SIC 4N-CH 1200V 79A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 310W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 79A
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
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Technische Details MSCSM120HM31TBL2NG Microchip Technology
Description: SIC 4N-CH 1200V 79A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 310W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 79A, Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V, Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V, Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 3mA.