Technische Details MSCSM120HRM311AG Microchip Technology
Description: SIC 4N-CH 1200V/700V 89A/124A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Three Level Inverter), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 395W (Tc), 365W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V, Current - Continuous Drain (Id) @ 25°C: 89A (Tc), 124A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V, 4500pF @ 700V, Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V, 19mOhm @ 40A, 20V, Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V, 215nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 3mA, 2.4V @ 4mA.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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|---|---|---|---|---|---|
| MSCSM120HRM311AG | Hersteller : Microchip Technology |
 PM-MOSFET-SIC- SP1F |
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| MSCSM120HRM311AG | Hersteller : Microchip Technology |
Description: SIC 4N-CH 1200V/700V 89A/124A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Three Level Inverter) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 395W (Tc), 365W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V Current - Continuous Drain (Id) @ 25°C: 89A (Tc), 124A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V, 4500pF @ 700V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V, 19mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V, 215nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA, 2.4V @ 4mA |
Produkt ist nicht verfügbar |