MSCSM170DUM11T3AG Microchip Technology
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Technische Details MSCSM170DUM11T3AG Microchip Technology
Description: SIC 2N-CH 1700V 240A SP3F, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual) Common Source, Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1140W (Tc), Drain to Source Voltage (Vdss): 1700V (1.7kV), Current - Continuous Drain (Id) @ 25°C: 240A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V, Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V, Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V, Vgs(th) (Max) @ Id: 3.2V @ 10mA, Supplier Device Package: SP3F, Part Status: Active.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MSCSM170DUM11T3AG | Hersteller : Microchip Technology |
 Dual Common Source SiC MOSFET Power Module |
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MSCSM170DUM11T3AG | Hersteller : Microchip Technology |
Description: SIC 2N-CH 1700V 240A SP3F Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1140W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 10mA Supplier Device Package: SP3F Part Status: Active |
Produkt ist nicht verfügbar |