MSCSM70HM05AG Microchip Technology

Description: PM-MOSFET-SIC-SP6C, Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V, Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V, Current - Continuous Drain (Id) @ 25°C: 349A (Tc), Drain to Source Voltage (Vdss): 700V, Power - Max: 966W (Tc), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 175°C (TJ), Configuration: 4 N-Channel (Full Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk, Part Status: Active, Vgs(th) (Max) @ Id: 2.4V @ 12mA.