N3PT1000MP170D NoMIS Power
Hersteller: NoMIS PowerDescription: 1700 V 1000 m SiC MOSFET TO-247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 20V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 1000 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.96 EUR |
| 25+ | 7.56 EUR |
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Technische Details N3PT1000MP170D NoMIS Power
Description: 1700 V 1000 m SiC MOSFET TO-247-, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C, Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.1A, Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 20V, Power Dissipation (Max): 56W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -5V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 1000 V.