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NC1M120C12WDCU

NC1M120C12WDCU NovuSem

NC1M120C12WDCU.pdf Hersteller: NovuSem
Description: SiC MOS Wafer 12mOhm 1200V NiPdA
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 20V
Vgs(th) (Max) @ Id: 3.5V @ 40mA
Supplier Device Package: Wafer
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Input Capacitance (Ciss) (Max) @ Vds: 8330 pF @ 1000 V
auf Bestellung 2180 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
218+69.46 EUR
Mindestbestellmenge: 218
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Technische Details NC1M120C12WDCU NovuSem

Description: SiC MOS Wafer 12mOhm 1200V NiPdA, Packaging: Tray, Package / Case: Die, Mounting Type: Surface Mount, Technology: SiCFET (Silicon Carbide), Current - Continuous Drain (Id) @ 25°C: 214A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 20V, Vgs(th) (Max) @ Id: 3.5V @ 40mA, Supplier Device Package: Wafer, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 1200 V, Input Capacitance (Ciss) (Max) @ Vds: 8330 pF @ 1000 V.