NP80N055MHE-S18-AY Renesas
Hersteller: RenesasDescription: NP80N055MHE-S18-AY - SWITCHINGN-
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Power Dissipation (Max): 1.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MP-25K
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 135+ | 3.69 EUR |
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Technische Details NP80N055MHE-S18-AY Renesas
Description: NP80N055MHE-S18-AY - SWITCHINGN-, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V, Power Dissipation (Max): 1.8W (Ta), 120W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: MP-25K, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V.
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Verfügbarkeit |
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|---|---|---|---|---|---|
| NP80N055MHE-S18-AY | Hersteller : Renesas |
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