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NSBA123YMXWTBG

NSBA123YMXWTBG onsemi

NSBAMXW-D.PDF Hersteller: onsemi
Description: BIAS RESISTOR TRANSISTORS (BRT)
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: 3-XDFNW (1x1)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
77+0.23 EUR
88+0.2 EUR
103+0.17 EUR
250+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
5000+0.13 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NSBA123YMXWTBG onsemi

Description: BIAS RESISTOR TRANSISTORS (BRT), Packaging: Bulk, Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Supplier Device Package: 3-XDFNW (1x1), Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 450 mW, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Resistors Included: R1 and R2.