NSVBSP19AT1G onsemi
Hersteller: onsemi
Description: TRANS NPN 350V 0.1A SOT223
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 70MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
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Technische Details NSVBSP19AT1G onsemi
Description: TRANS NPN 350V 0.1A SOT223, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Power - Max: 800 mW, Voltage - Collector Emitter Breakdown (Max): 350 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Obsolete, Supplier Device Package: SOT-223 (TO-261), Frequency - Transition: 70MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V, Current - Collector Cutoff (Max): 20nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount.