NTD4815N-1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 6.9A/35A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Part Status: Obsolete
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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Technische Details NTD4815N-1G onsemi
Description: MOSFET N-CH 30V 6.9A/35A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V, Part Status: Obsolete, Supplier Device Package: I-PAK, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.