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NTE2912

NTE2912 NTE Electronics

nte2912.pdf Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 58A; Idm: 280A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 58A
Pulsed drain current: 280A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Kind of channel: enhancement
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Technische Details NTE2912 NTE Electronics

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 75V; 58A; Idm: 280A; 230W; TO220AB, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 75V, Drain current: 58A, Pulsed drain current: 280A, Power dissipation: 230W, Case: TO220AB, Gate-source voltage: ±20V, On-state resistance: 13mΩ, Mounting: THT, Kind of channel: enhancement.