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NTE2913

NTE2913 NTE Electronics

pVersion=0046&contRep=ZT&docId=005056AB90B41ED9A8F8B06A92EB80C1&compId=nte2913.pdf?ci_sign=f6ab3b4f3c7e6a5992842f53717fb5e6a2a92f77 Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 390A; 200W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 390A
Power dissipation: 200W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of channel: enhancement
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Technische Details NTE2913 NTE Electronics

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 390A; 200W; TO247, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 55V, Drain current: 80A, Pulsed drain current: 390A, Power dissipation: 200W, Case: TO247, Gate-source voltage: ±20V, On-state resistance: 8mΩ, Mounting: THT, Kind of channel: enhancement.