NTE2960 NTE Electronics, Inc
Hersteller: NTE Electronics, Inc
Description: MOSFET-N-CHAN ENHANCEMENT
Packaging: Bag
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 40W
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220 Full Pack
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.08 EUR |
| 10+ | 17.17 EUR |
| 20+ | 16.28 EUR |
| 50+ | 15.37 EUR |
| 100+ | 14.99 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2 Stücke
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Technische Details NTE2960 NTE Electronics, Inc
Description: MOSFET-N-CHAN ENHANCEMENT, Packaging: Bag, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 40W, Drain to Source Voltage (Vdss): 900V, Current - Continuous Drain (Id) @ 25°C: 7A, Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V, Rds On (Max) @ Id, Vgs: 2Ohm @ 3A, 10V, Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220 Full Pack.