NTE6129 NTE Electronics, Inc
Hersteller: NTE Electronics, IncDescription: DIODE GP 1.6KV 700A DO200AB
Packaging: Bag
Package / Case: DO-200AB, B-PUK
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 700A
Supplier Device Package: DO-200AB
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 1500 A
Current - Reverse Leakage @ Vr: 50 mA @ 1600 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 552.64 EUR |
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Technische Details NTE6129 NTE Electronics, Inc
Description: DIODE GP 1.6KV 700A DO200AB, Packaging: Bag, Package / Case: DO-200AB, B-PUK, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 700A, Supplier Device Package: DO-200AB, Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1600 V, Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 1500 A, Current - Reverse Leakage @ Vr: 50 mA @ 1600 V.