NTE619 NTE Electronics, Inc
Hersteller: NTE Electronics, IncDescription: DIODE GEN PURP 600V 5A DO27
Packaging: Bag
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 2740 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 2.27 EUR |
| 10+ | 2.16 EUR |
| 20+ | 2.04 EUR |
| 50+ | 1.94 EUR |
| 100+ | 1.88 EUR |
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Technische Details NTE619 NTE Electronics, Inc
Description: DIODE GEN PURP 600V 5A DO27, Packaging: Bag, Package / Case: DO-201AA, DO-27, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 170pF @ 4V, 1MHz, Current - Average Rectified (Io): 5A, Supplier Device Package: DO-27, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.