NTMFS4833NST3G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 30V 16A/156A SO-8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SO-8FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 12 V
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details NTMFS4833NST3G onsemi
Description: MOSFET N-CH 30V 16A/156A SO-8FL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V, Power Dissipation (Max): 900mW (Ta), 86.2W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SO-8FL, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 11.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5250 pF @ 12 V.