NVTFS012P03P8ZTAG ONSEMI
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.7A
Pulsed drain current: -47A
Power dissipation: 2.4W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.7A
Pulsed drain current: -47A
Power dissipation: 2.4W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details NVTFS012P03P8ZTAG ONSEMI
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -11.7A, Pulsed drain current: -47A, Power dissipation: 2.4W, Case: WDFN8, Gate-source voltage: ±25V, On-state resistance: 11.3mΩ, Mounting: SMD, Gate charge: 36nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NVTFS012P03P8ZTAG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
NVTFS012P03P8ZTAG | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11.7A; Idm: -47A; 2.4W; WDFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -11.7A Pulsed drain current: -47A Power dissipation: 2.4W Case: WDFN8 Gate-source voltage: ±25V On-state resistance: 11.3mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |