NVTYS9D6P04M8LTWG onsemi
Hersteller: onsemi
Description: MV8 40V LL SINGLE PCH L
Input Capacitance (Ciss) (Max) @ Vds: 2368 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 3V @ 580µA
Power Dissipation (Max): 3.9W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details NVTYS9D6P04M8LTWG onsemi
Description: MV8 40V LL SINGLE PCH L, Input Capacitance (Ciss) (Max) @ Vds: 2368 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-LFPAK, Vgs(th) (Max) @ Id: 3V @ 580µA, Power Dissipation (Max): 3.9W (Ta), 75W (Tc), Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1205, 8-LFPAK56, Packaging: Tape & Reel (TR).
