Technische Details NVTYS9D6P04M8LTWG ON Semiconductor
Description: MV8 40V LL SINGLE PCH L, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc), Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V, Power Dissipation (Max): 3.9W (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 3V @ 580µA, Supplier Device Package: 8-LFPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2368 pF @ 25 V.
Weitere Produktangebote NVTYS9D6P04M8LTWG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NVTYS9D6P04M8LTWG | Hersteller : ONSEMI |
 NVTYS9D6P04M8LTWG SMD P channel transistors |
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| NVTYS9D6P04M8LTWG | Hersteller : onsemi |
Description: MV8 40V LL SINGLE PCH L Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V Power Dissipation (Max): 3.9W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 3V @ 580µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2368 pF @ 25 V |
Produkt ist nicht verfügbar |