P0R5B60HP2-5071 SHINDENGEN
Hersteller: SHINDENGENCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A
Mounting: SMD
Case: FB (TO252AA)
Polarisation: unipolar
Power dissipation: 35W
Kind of package: reel; tape
Gate charge: 4.3nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 2A
Drain-source voltage: 600V
Drain current: 0.5A
On-state resistance: 10Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2999 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 76+ | 0.94 EUR |
| 95+ | 0.76 EUR |
| 127+ | 0.57 EUR |
| 136+ | 0.53 EUR |
| 236+ | 0.3 EUR |
| 249+ | 0.29 EUR |
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Technische Details P0R5B60HP2-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A, Mounting: SMD, Case: FB (TO252AA), Polarisation: unipolar, Power dissipation: 35W, Kind of package: reel; tape, Gate charge: 4.3nC, Technology: Hi-PotMOS2, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 2A, Drain-source voltage: 600V, Drain current: 0.5A, On-state resistance: 10Ω, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P0R5B60HP2-5071 nach Preis ab 0.29 EUR bis 0.94 EUR
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P0R5B60HP2-5071 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A Mounting: SMD Case: FB (TO252AA) Polarisation: unipolar Power dissipation: 35W Kind of package: reel; tape Gate charge: 4.3nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 2A Drain-source voltage: 600V Drain current: 0.5A On-state resistance: 10Ω Type of transistor: N-MOSFET |
auf Bestellung 2999 Stücke: Lieferzeit 14-21 Tag (e) |
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