P0R5B60HP2-5071 SHINDENGEN

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 500mA; Idm: 2A, Case: FB (TO252AA), Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Technology: Hi-PotMOS2, Type of transistor: N-MOSFET, Gate charge: 4.3nC, Drain current: 0.5A, Pulsed drain current: 2A, On-state resistance: 10Ω, Gate-source voltage: ±30V, Power dissipation: 35W, Drain-source voltage: 600V, Polarisation: unipolar.