P1000M-CT Diotec Semiconductor
Hersteller: Diotec SemiconductorDescription: DIODE GEN PURP 1KV 10A P600
Packaging: Strip
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 960 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 3.53 EUR |
| 40+ | 3.27 EUR |
| 80+ | 2.92 EUR |
| 160+ | 2.43 EUR |
| 320+ | 1.99 EUR |
| 640+ | 1.19 EUR |
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Technische Details P1000M-CT Diotec Semiconductor
Description: DIODE GEN PURP 1KV 10A P600, Packaging: Strip, Package / Case: P600, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.5 µs, Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: P600, Operating Temperature - Junction: -50°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 1 V.