Produkte > SHINDENGEN > P16B6SB-5071

P16B6SB-5071 SHINDENGEN


P16B6SB.pdf _Shindengen Catalogue 2020.pdf
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Pulsed drain current: 48A
Power dissipation: 20W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17nC
Technology: EETMOS3
auf Bestellung 2981 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
123+0.69 EUR
138+0.62 EUR
155+0.55 EUR
500+0.49 EUR
Mindestbestellmenge: 123 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details P16B6SB-5071 SHINDENGEN

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 16A, Pulsed drain current: 48A, Power dissipation: 20W, Case: FB (TO252AA), Gate-source voltage: ±20V, On-state resistance: 37mΩ, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 17nC, Technology: EETMOS3.