P16B6SB-5071 SHINDENGEN
Hersteller: SHINDENGENCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Pulsed drain current: 48A
Power dissipation: 20W
Case: FB (TO252AA)
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2722 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 109+ | 0.66 EUR |
| 121+ | 0.59 EUR |
| 159+ | 0.45 EUR |
| 169+ | 0.43 EUR |
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Technische Details P16B6SB-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W, Type of transistor: N-MOSFET, Technology: EETMOS3, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 16A, Pulsed drain current: 48A, Power dissipation: 20W, Case: FB (TO252AA), Gate-source voltage: ±20V, On-state resistance: 37mΩ, Mounting: SMD, Gate charge: 17nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P16B6SB-5071 nach Preis ab 0.43 EUR bis 0.66 EUR
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P16B6SB-5071 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 16A; Idm: 48A; 20W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Pulsed drain current: 48A Power dissipation: 20W Case: FB (TO252AA) Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2722 Stücke: Lieferzeit 14-21 Tag (e) |
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