P18LA12SL-5070 SHINDENGEN
Hersteller: SHINDENGENCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA
Technology: EETMOS3
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 47nC
On-state resistance: 44mΩ
Drain current: 18A
Gate-source voltage: ±20V
Pulsed drain current: 54A
Power dissipation: 99W
Drain-source voltage: 120V
Case: LA
Anzahl je Verpackung: 1 Stücke
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Technische Details P18LA12SL-5070 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA, Technology: EETMOS3, Kind of channel: enhancement, Kind of package: reel; tape, Type of transistor: N-MOSFET, Mounting: SMD, Polarisation: unipolar, Gate charge: 47nC, On-state resistance: 44mΩ, Drain current: 18A, Gate-source voltage: ±20V, Pulsed drain current: 54A, Power dissipation: 99W, Drain-source voltage: 120V, Case: LA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P18LA12SL-5070
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| P18LA12SL-5070 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA Technology: EETMOS3 Kind of channel: enhancement Kind of package: reel; tape Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 47nC On-state resistance: 44mΩ Drain current: 18A Gate-source voltage: ±20V Pulsed drain current: 54A Power dissipation: 99W Drain-source voltage: 120V Case: LA |
Produkt ist nicht verfügbar |