P18LA12SL-5070 SHINDENGEN
Hersteller: SHINDENGENCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA
Mounting: SMD
Drain-source voltage: 120V
Drain current: 18A
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Power dissipation: 99W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 54A
Case: LA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details P18LA12SL-5070 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA, Mounting: SMD, Drain-source voltage: 120V, Drain current: 18A, On-state resistance: 44mΩ, Type of transistor: N-MOSFET, Power dissipation: 99W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 47nC, Technology: EETMOS3, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 54A, Case: LA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P18LA12SL-5070
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| P18LA12SL-5070 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 18A; Idm: 54A; 99W; LA Mounting: SMD Drain-source voltage: 120V Drain current: 18A On-state resistance: 44mΩ Type of transistor: N-MOSFET Power dissipation: 99W Polarisation: unipolar Kind of package: reel; tape Gate charge: 47nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 54A Case: LA |
Produkt ist nicht verfügbar |