P19LA10SL-5070 SHINDENGEN
Hersteller: SHINDENGENCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 19A; Idm: 57A; 83W; LA
Power dissipation: 83W
Polarisation: unipolar
On-state resistance: 35mΩ
Drain current: 19A
Drain-source voltage: 100V
Case: LA
Kind of package: reel; tape
Mounting: SMD
Gate charge: 38nC
Technology: EETMOS3
Kind of channel: enhancement
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 57A
Anzahl je Verpackung: 1 Stücke
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Technische Details P19LA10SL-5070 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 19A; Idm: 57A; 83W; LA, Power dissipation: 83W, Polarisation: unipolar, On-state resistance: 35mΩ, Drain current: 19A, Drain-source voltage: 100V, Case: LA, Kind of package: reel; tape, Mounting: SMD, Gate charge: 38nC, Technology: EETMOS3, Kind of channel: enhancement, Gate-source voltage: ±20V, Type of transistor: N-MOSFET, Pulsed drain current: 57A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P19LA10SL-5070
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| P19LA10SL-5070 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 19A; Idm: 57A; 83W; LA Power dissipation: 83W Polarisation: unipolar On-state resistance: 35mΩ Drain current: 19A Drain-source voltage: 100V Case: LA Kind of package: reel; tape Mounting: SMD Gate charge: 38nC Technology: EETMOS3 Kind of channel: enhancement Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 57A |
Produkt ist nicht verfügbar |