P1R5B40HP2-5071 SHINDENGEN
Hersteller: SHINDENGENCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 1.5A; Idm: 6A; 35W
Mounting: SMD
Power dissipation: 35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 3.9nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 6A
Case: FB (TO252AA)
Drain-source voltage: 400V
Drain current: 1.5A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
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Technische Details P1R5B40HP2-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 1.5A; Idm: 6A; 35W, Mounting: SMD, Power dissipation: 35W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 3.9nC, Technology: Hi-PotMOS2, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 6A, Case: FB (TO252AA), Drain-source voltage: 400V, Drain current: 1.5A, On-state resistance: 5Ω, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P1R5B40HP2-5071
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| P1R5B40HP2-5071 | Hersteller : Shindengen |
MOSFET Hi-PotMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
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| P1R5B40HP2-5071 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 1.5A; Idm: 6A; 35W Mounting: SMD Power dissipation: 35W Polarisation: unipolar Kind of package: reel; tape Gate charge: 3.9nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 6A Case: FB (TO252AA) Drain-source voltage: 400V Drain current: 1.5A On-state resistance: 5Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |