P1R5B40HP2-5071 SHINDENGEN

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 1.5A; Idm: 6A; 35W, Mounting: SMD, Pulsed drain current: 6A, Power dissipation: 35W, Gate charge: 3.9nC, Polarisation: unipolar, Technology: Hi-PotMOS2, Drain current: 1.5A, Kind of channel: enhancement, Drain-source voltage: 400V, Type of transistor: N-MOSFET, Gate-source voltage: ±30V, Kind of package: reel; tape, Case: FB (TO252AA), On-state resistance: 5Ω.