Technische Details P1R5B40HP2-5071 Shindengen
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 1.5A; Idm: 6A; 35W, Type of transistor: N-MOSFET, Mounting: SMD, Kind of package: reel; tape, Technology: Hi-PotMOS2, Kind of channel: enhancement, Polarisation: unipolar, Case: FB (TO252AA), Gate charge: 3.9nC, On-state resistance: 5Ω, Drain current: 1.5A, Pulsed drain current: 6A, Gate-source voltage: ±30V, Power dissipation: 35W, Drain-source voltage: 400V.
Weitere Produktangebote P1R5B40HP2-5071
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| P1R5B40HP2-5071 | Hersteller : SHINDENGEN |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 1.5A; Idm: 6A; 35W Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Technology: Hi-PotMOS2 Kind of channel: enhancement Polarisation: unipolar Case: FB (TO252AA) Gate charge: 3.9nC On-state resistance: 5Ω Drain current: 1.5A Pulsed drain current: 6A Gate-source voltage: ±30V Power dissipation: 35W Drain-source voltage: 400V |
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