P22F10SN-5600 SHINDENGEN

Category: THT N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 22A; Idm: 66A; 35W, Type of transistor: N-MOSFET, Technology: EETMOS3, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 22A, Pulsed drain current: 66A, Power dissipation: 35W, Case: FTO-220AG (SC91), Gate-source voltage: ±20V, On-state resistance: 28mΩ, Mounting: THT, Gate charge: 34nC, Kind of package: bulk, Kind of channel: enhancement.