P2B60HP2F-5071 SHINDENGEN
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 2A; Idm: 8A; 35W
Mounting: SMD
Case: FB (TO252AA)
Polarisation: unipolar
Power dissipation: 35W
Kind of package: reel; tape
Gate charge: 6.8nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 8A
Drain-source voltage: 600V
Drain current: 2A
On-state resistance: 4.2Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 2A; Idm: 8A; 35W
Mounting: SMD
Case: FB (TO252AA)
Polarisation: unipolar
Power dissipation: 35W
Kind of package: reel; tape
Gate charge: 6.8nC
Technology: Hi-PotMOS2
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 8A
Drain-source voltage: 600V
Drain current: 2A
On-state resistance: 4.2Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
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Technische Details P2B60HP2F-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 2A; Idm: 8A; 35W, Mounting: SMD, Case: FB (TO252AA), Polarisation: unipolar, Power dissipation: 35W, Kind of package: reel; tape, Gate charge: 6.8nC, Technology: Hi-PotMOS2, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 8A, Drain-source voltage: 600V, Drain current: 2A, On-state resistance: 4.2Ω, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P2B60HP2F-5071
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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P2B60HP2F-5071 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 2A; Idm: 8A; 35W Mounting: SMD Case: FB (TO252AA) Polarisation: unipolar Power dissipation: 35W Kind of package: reel; tape Gate charge: 6.8nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 8A Drain-source voltage: 600V Drain current: 2A On-state resistance: 4.2Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |