P2FE60VX5K-5071 SHINDENGEN
Hersteller: SHINDENGENCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 27W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 27W
Case: FE (TO252AB similar)
Gate-source voltage: ±30V
On-state resistance: 4.2Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
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Technische Details P2FE60VX5K-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 27W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 2A, Pulsed drain current: 8A, Power dissipation: 27W, Case: FE (TO252AB similar), Gate-source voltage: ±30V, On-state resistance: 4.2Ω, Mounting: SMD, Gate charge: 12nC, Kind of package: reel; tape, Kind of channel: enhanced, Application: automotive industry, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P2FE60VX5K-5071
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| P2FE60VX5K-5071 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2A; Idm: 8A; 27W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2A Pulsed drain current: 8A Power dissipation: 27W Case: FE (TO252AB similar) Gate-source voltage: ±30V On-state resistance: 4.2Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |