P30LA10SL-5070 SHINDENGEN

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 30A; Idm: 90A; 142W
Case: LA
Kind of package: reel; tape
Technology: EETMOS3
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 61nC
On-state resistance: 21mΩ
Gate-source voltage: ±20V
Drain current: 30A
Power dissipation: 142W
Pulsed drain current: 90A
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
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Technische Details P30LA10SL-5070 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 30A; Idm: 90A; 142W, Case: LA, Kind of package: reel; tape, Technology: EETMOS3, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 61nC, On-state resistance: 21mΩ, Gate-source voltage: ±20V, Drain current: 30A, Power dissipation: 142W, Pulsed drain current: 90A, Drain-source voltage: 100V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P30LA10SL-5070
Foto | Bezeichnung | Hersteller | Beschreibung |
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P30LA10SL-5070 | Hersteller : SHINDENGEN |
![]() Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 30A; Idm: 90A; 142W Case: LA Kind of package: reel; tape Technology: EETMOS3 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 61nC On-state resistance: 21mΩ Gate-source voltage: ±20V Drain current: 30A Power dissipation: 142W Pulsed drain current: 90A Drain-source voltage: 100V |
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