P30LA10SL-5070 SHINDENGEN
Hersteller: SHINDENGENCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 30A; Idm: 90A; 142W
Case: LA
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 30A
On-state resistance: 21mΩ
Type of transistor: N-MOSFET
Power dissipation: 142W
Polarisation: unipolar
Gate charge: 61nC
Technology: EETMOS3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 90A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
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Technische Details P30LA10SL-5070 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 30A; Idm: 90A; 142W, Case: LA, Kind of package: reel; tape, Drain-source voltage: 100V, Drain current: 30A, On-state resistance: 21mΩ, Type of transistor: N-MOSFET, Power dissipation: 142W, Polarisation: unipolar, Gate charge: 61nC, Technology: EETMOS3, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 90A, Mounting: SMD, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P30LA10SL-5070
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| P30LA10SL-5070 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 30A; Idm: 90A; 142W Case: LA Kind of package: reel; tape Drain-source voltage: 100V Drain current: 30A On-state resistance: 21mΩ Type of transistor: N-MOSFET Power dissipation: 142W Polarisation: unipolar Gate charge: 61nC Technology: EETMOS3 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 90A Mounting: SMD |
Produkt ist nicht verfügbar |