Produkte > SHINDENGEN > P30LA10SL-5070

P30LA10SL-5070 SHINDENGEN


pVersion=0046&contRep=ZT&docId=005056AB90B41EDB839118EC4C6220C7&compId=_Shindengen%20Catalogue%202020.pdf?ci_sign=187763cd1f57da04a713ebf500a9ceff30383ffb Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 30A; Idm: 90A; 142W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 90A
Power dissipation: 142W
Case: LA
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
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Technische Details P30LA10SL-5070 SHINDENGEN

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 30A; Idm: 90A; 142W, Type of transistor: N-MOSFET, Technology: EETMOS3, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 30A, Pulsed drain current: 90A, Power dissipation: 142W, Case: LA, Gate-source voltage: ±20V, On-state resistance: 21mΩ, Mounting: SMD, Gate charge: 61nC, Kind of package: reel; tape, Kind of channel: enhancement.