P38LF6QL-5071 SHINDENGEN
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 38A; Idm: 114A; 123W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Pulsed drain current: 114A
Power dissipation: 123W
Gate charge: 49nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 38A
Kind of channel: enhanced
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 38A; Idm: 114A; 123W
Mounting: SMD
Case: LF (MO235B similar)
Kind of package: reel; tape
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 9.9mΩ
Pulsed drain current: 114A
Power dissipation: 123W
Gate charge: 49nC
Polarisation: unipolar
Technology: EETMOS4
Drain current: 38A
Kind of channel: enhanced
Drain-source voltage: 60V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details P38LF6QL-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 38A; Idm: 114A; 123W, Mounting: SMD, Case: LF (MO235B similar), Kind of package: reel; tape, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, On-state resistance: 9.9mΩ, Pulsed drain current: 114A, Power dissipation: 123W, Gate charge: 49nC, Polarisation: unipolar, Technology: EETMOS4, Drain current: 38A, Kind of channel: enhanced, Drain-source voltage: 60V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P38LF6QL-5071
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
P38LF6QL-5071 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS4; unipolar; 60V; 38A; Idm: 114A; 123W Mounting: SMD Case: LF (MO235B similar) Kind of package: reel; tape Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 9.9mΩ Pulsed drain current: 114A Power dissipation: 123W Gate charge: 49nC Polarisation: unipolar Technology: EETMOS4 Drain current: 38A Kind of channel: enhanced Drain-source voltage: 60V |
Produkt ist nicht verfügbar |