
P40B10SL-5071 SHINDENGEN

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W
Case: FB (TO252AA)
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 18.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Polarisation: unipolar
Gate charge: 66nC
Technology: EETMOS3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 40A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1569 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
87+ | 0.83 EUR |
97+ | 0.74 EUR |
110+ | 0.65 EUR |
112+ | 0.64 EUR |
117+ | 0.61 EUR |
122+ | 0.59 EUR |
500+ | 0.58 EUR |
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Technische Details P40B10SL-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W, Case: FB (TO252AA), Kind of package: reel; tape, Drain-source voltage: 100V, Drain current: 40A, On-state resistance: 18.5mΩ, Type of transistor: N-MOSFET, Power dissipation: 62.5W, Polarisation: unipolar, Gate charge: 66nC, Technology: EETMOS3, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 40A, Mounting: SMD, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P40B10SL-5071 nach Preis ab 0.58 EUR bis 0.83 EUR
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P40B10SL-5071 | Hersteller : SHINDENGEN |
![]() Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W Case: FB (TO252AA) Kind of package: reel; tape Drain-source voltage: 100V Drain current: 40A On-state resistance: 18.5mΩ Type of transistor: N-MOSFET Power dissipation: 62.5W Polarisation: unipolar Gate charge: 66nC Technology: EETMOS3 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD |
auf Bestellung 1569 Stücke: Lieferzeit 14-21 Tag (e) |
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