P40B10SL-5071 SHINDENGEN
Hersteller: SHINDENGENCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W
Power dissipation: 62.5W
Polarisation: unipolar
On-state resistance: 18.5mΩ
Drain current: 40A
Drain-source voltage: 100V
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Gate charge: 66nC
Technology: EETMOS3
Kind of channel: enhancement
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Pulsed drain current: 40A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1569 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 74+ | 0.97 EUR |
| 82+ | 0.88 EUR |
| 103+ | 0.70 EUR |
| 109+ | 0.66 EUR |
| 500+ | 0.65 EUR |
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Technische Details P40B10SL-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W, Power dissipation: 62.5W, Polarisation: unipolar, On-state resistance: 18.5mΩ, Drain current: 40A, Drain-source voltage: 100V, Case: FB (TO252AA), Kind of package: reel; tape, Mounting: SMD, Gate charge: 66nC, Technology: EETMOS3, Kind of channel: enhancement, Gate-source voltage: ±20V, Type of transistor: N-MOSFET, Pulsed drain current: 40A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P40B10SL-5071 nach Preis ab 0.65 EUR bis 0.97 EUR
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P40B10SL-5071 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 40A; Idm: 40A; 62.5W Power dissipation: 62.5W Polarisation: unipolar On-state resistance: 18.5mΩ Drain current: 40A Drain-source voltage: 100V Case: FB (TO252AA) Kind of package: reel; tape Mounting: SMD Gate charge: 66nC Technology: EETMOS3 Kind of channel: enhancement Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 40A |
auf Bestellung 1569 Stücke: Lieferzeit 14-21 Tag (e) |
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