P40B6SL-5071 SHINDENGEN
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 40A; Idm: 120A; 44W
Technology: EETMOS3
Mounting: SMD
Case: FB (TO252AA)
Kind of package: reel; tape
Power dissipation: 44W
Polarisation: unipolar
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 40A; Idm: 120A; 44W
Technology: EETMOS3
Mounting: SMD
Case: FB (TO252AA)
Kind of package: reel; tape
Power dissipation: 44W
Polarisation: unipolar
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1177 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
105+ | 0.68 EUR |
117+ | 0.62 EUR |
146+ | 0.49 EUR |
154+ | 0.47 EUR |
3000+ | 0.46 EUR |
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Technische Details P40B6SL-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 40A; Idm: 120A; 44W, Technology: EETMOS3, Mounting: SMD, Case: FB (TO252AA), Kind of package: reel; tape, Power dissipation: 44W, Polarisation: unipolar, Gate charge: 43nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 120A, Drain-source voltage: 60V, Drain current: 40A, On-state resistance: 12mΩ, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P40B6SL-5071 nach Preis ab 0.47 EUR bis 0.68 EUR
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P40B6SL-5071 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 40A; Idm: 120A; 44W Technology: EETMOS3 Mounting: SMD Case: FB (TO252AA) Kind of package: reel; tape Power dissipation: 44W Polarisation: unipolar Gate charge: 43nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Drain-source voltage: 60V Drain current: 40A On-state resistance: 12mΩ Type of transistor: N-MOSFET |
auf Bestellung 1177 Stücke: Lieferzeit 14-21 Tag (e) |
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