Produkte > SHINDENGEN > P40B6SL-5071
P40B6SL-5071

P40B6SL-5071 SHINDENGEN

P40B6SL.pdf _Shindengen Catalogue 2020.pdf
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 40A; Idm: 120A; 44W
Case: FB (TO252AA)
Mounting: SMD
Technology: EETMOS3
Kind of package: reel; tape
Pulsed drain current: 120A
Power dissipation: 44W
Gate charge: 43nC
Polarisation: unipolar
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 12mΩ
auf Bestellung 822 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details P40B6SL-5071 SHINDENGEN

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 60V; 40A; Idm: 120A; 44W, Case: FB (TO252AA), Mounting: SMD, Technology: EETMOS3, Kind of package: reel; tape, Pulsed drain current: 120A, Power dissipation: 44W, Gate charge: 43nC, Polarisation: unipolar, Drain current: 40A, Kind of channel: enhancement, Drain-source voltage: 60V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, On-state resistance: 12mΩ.