P4B40HP2-5071 SHINDENGEN
Hersteller: SHINDENGENCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 4A; Idm: 16A; 35W
Drain-source voltage: 400V
Drain current: 4A
On-state resistance: 1.9Ω
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6.5nC
Technology: Hi-PotMOS2
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 16A
Mounting: SMD
Case: FB (TO252AA)
Anzahl je Verpackung: 1 Stücke
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Technische Details P4B40HP2-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 4A; Idm: 16A; 35W, Drain-source voltage: 400V, Drain current: 4A, On-state resistance: 1.9Ω, Type of transistor: N-MOSFET, Power dissipation: 35W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 6.5nC, Technology: Hi-PotMOS2, Kind of channel: enhancement, Gate-source voltage: ±30V, Pulsed drain current: 16A, Mounting: SMD, Case: FB (TO252AA), Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P4B40HP2-5071
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| P4B40HP2-5071 | Hersteller : Shindengen |
MOSFETs Hi-PotMOS series Power MOSFET SMD |
Produkt ist nicht verfügbar |
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| P4B40HP2-5071 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 400V; 4A; Idm: 16A; 35W Drain-source voltage: 400V Drain current: 4A On-state resistance: 1.9Ω Type of transistor: N-MOSFET Power dissipation: 35W Polarisation: unipolar Kind of package: reel; tape Gate charge: 6.5nC Technology: Hi-PotMOS2 Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 16A Mounting: SMD Case: FB (TO252AA) |
Produkt ist nicht verfügbar |