Produkte > SHINDENGEN > P4B60HP2F-5071

P4B60HP2F-5071 SHINDENGEN

_Shindengen Catalogue 2020.pdf Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 4A; Idm: 16A; 70W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 70W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
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Technische Details P4B60HP2F-5071 SHINDENGEN

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 600V; 4A; Idm: 16A; 70W, Type of transistor: N-MOSFET, Technology: Hi-PotMOS2, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 4A, Pulsed drain current: 16A, Power dissipation: 70W, Case: FB (TO252AA), Gate-source voltage: ±30V, On-state resistance: 1.9Ω, Mounting: SMD, Gate charge: 13nC, Kind of package: reel; tape, Kind of channel: enhancement.