P4F90VX3-5600 SHINDENGEN
Hersteller: SHINDENGENCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4A; Idm: 12A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: FTO-220AG (SC91)
Gate-source voltage: ±30V
On-state resistance: 3.4Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhancement
Application: automotive industry
Power dissipation: 79W
Gate charge: 21nC
Pulsed drain current: 12A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 418 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 72+ | 1 EUR |
| 80+ | 0.9 EUR |
| 84+ | 0.86 EUR |
| 90+ | 0.8 EUR |
| 100+ | 0.79 EUR |
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Technische Details P4F90VX3-5600 SHINDENGEN
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 900V; 4A; Idm: 12A; 79W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 900V, Drain current: 4A, Case: FTO-220AG (SC91), Gate-source voltage: ±30V, On-state resistance: 3.4Ω, Mounting: THT, Kind of package: bulk, Kind of channel: enhancement, Application: automotive industry, Power dissipation: 79W, Gate charge: 21nC, Pulsed drain current: 12A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P4F90VX3-5600 nach Preis ab 0.79 EUR bis 1 EUR
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P4F90VX3-5600 | Hersteller : SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 4A; Idm: 12A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Case: FTO-220AG (SC91) Gate-source voltage: ±30V On-state resistance: 3.4Ω Mounting: THT Kind of package: bulk Kind of channel: enhancement Application: automotive industry Power dissipation: 79W Gate charge: 21nC Pulsed drain current: 12A |
auf Bestellung 418 Stücke: Lieferzeit 14-21 Tag (e) |
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