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P8B10SBK-5071 SHINDENGEN


Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 24A; 23W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 100V
Drain current: 8A
On-state resistance: 94mΩ
Type of transistor: N-MOSFET
Power dissipation: 23W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 24A
Gate charge: 16.5nC
Anzahl je Verpackung: 1 Stücke
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Technische Details P8B10SBK-5071 SHINDENGEN

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 24A; 23W, Case: FB (TO252AA), Kind of package: reel; tape, Mounting: SMD, Drain-source voltage: 100V, Drain current: 8A, On-state resistance: 94mΩ, Type of transistor: N-MOSFET, Power dissipation: 23W, Polarisation: unipolar, Kind of channel: enhanced, Gate-source voltage: ±10V, Pulsed drain current: 24A, Gate charge: 16.5nC, Anzahl je Verpackung: 1 Stücke.

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P8B10SBK-5071 Hersteller : SHINDENGEN Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 24A; 23W
Case: FB (TO252AA)
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 100V
Drain current: 8A
On-state resistance: 94mΩ
Type of transistor: N-MOSFET
Power dissipation: 23W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 24A
Gate charge: 16.5nC
Produkt ist nicht verfügbar