PCDH4065CCGB_T0_00601 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 253W
Kind of package: tube
Semiconductor structure: common cathode; double
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 0.1mA
Max. forward voltage: 1.4V
Load current: 20A x2
Max. load current: 84A
Power dissipation: 253W
Max. off-state voltage: 650V
Max. forward impulse current: 1.04kA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 253W
Kind of package: tube
Semiconductor structure: common cathode; double
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Case: TO247-3
Leakage current: 0.1mA
Max. forward voltage: 1.4V
Load current: 20A x2
Max. load current: 84A
Power dissipation: 253W
Max. off-state voltage: 650V
Max. forward impulse current: 1.04kA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details PCDH4065CCGB_T0_00601 PanJit Semiconductor
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 253W, Kind of package: tube, Semiconductor structure: common cathode; double, Mounting: THT, Type of diode: Schottky rectifying, Technology: SiC, Case: TO247-3, Leakage current: 0.1mA, Max. forward voltage: 1.4V, Load current: 20A x2, Max. load current: 84A, Power dissipation: 253W, Max. off-state voltage: 650V, Max. forward impulse current: 1.04kA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote PCDH4065CCGB_T0_00601
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
PCDH4065CCGB_T0_00601 | Hersteller : Panjit |
 SiC Schottky Diodes 650V SiC Schottky Barrier Diode |
Produkt ist nicht verfügbar |
|
| PCDH4065CCGB_T0_00601 | Hersteller : PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 253W Kind of package: tube Semiconductor structure: common cathode; double Mounting: THT Type of diode: Schottky rectifying Technology: SiC Case: TO247-3 Leakage current: 0.1mA Max. forward voltage: 1.4V Load current: 20A x2 Max. load current: 84A Power dissipation: 253W Max. off-state voltage: 650V Max. forward impulse current: 1.04kA |
Produkt ist nicht verfügbar |