PEC4102C2A_R1_00501 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 4V; 0.35kW; bidirectional; SOT23
Mounting: SMD
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Case: SOT23
Type of diode: TVS
Leakage current: 0.5µA
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Category: Protection diodes - arrays
Description: Diode: TVS; 4V; 0.35kW; bidirectional; SOT23
Mounting: SMD
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Case: SOT23
Type of diode: TVS
Leakage current: 0.5µA
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
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Technische Details PEC4102C2A_R1_00501 PanJit Semiconductor
Category: Protection diodes - arrays, Description: Diode: TVS; 4V; 0.35kW; bidirectional; SOT23, Mounting: SMD, Peak pulse power dissipation: 0.35kW, Semiconductor structure: bidirectional, Case: SOT23, Type of diode: TVS, Leakage current: 0.5µA, Max. off-state voltage: 2.5V, Breakdown voltage: 4V.