PH3230S.115
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Technische Details PH3230S.115
Description: MOSFET N-CH 30V 100A LFPAK, Packaging: Cut Tape (CT), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V, Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Obsolete, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V.
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PH3230S,115 | Nexperia USA Inc. |
 Description: MOSFET N-CH 30V 100A LFPAKPackaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PH3230S,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Description: MOSFET N-CH 30V 100A LFPAK
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH