PJA3441_R1_00501 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.1A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -12.4A
Gate charge: 6nC
Kind of package: reel; tape
| Anzahl | Privatkunde |
|---|---|
| 162+ | 0.52 EUR |
| 242+ | 0.36 EUR |
| 317+ | 0.27 EUR |
| 455+ | 0.19 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.17 EUR |
| 3000+ | 0.14 EUR |
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Technische Details PJA3441_R1_00501 PanJit Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -40V, Drain current: -3.1A, Power dissipation: 1.25W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 108mΩ, Mounting: SMD, Kind of channel: enhancement, Pulsed drain current: -12.4A, Gate charge: 6nC, Kind of package: reel; tape.

