Produkte > PANJIT SEMICONDUCTOR > PJMH040N60EC_T0_00201

PJMH040N60EC_T0_00201 PanJit Semiconductor


Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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Technische Details PJMH040N60EC_T0_00201 PanJit Semiconductor

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 71A, Pulsed drain current: 212A, Power dissipation: 200W, Case: TO247AD-3, Gate-source voltage: ±30V, On-state resistance: 40mΩ, Mounting: THT, Gate charge: 144nC, Kind of package: tube, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.

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PJMH040N60EC_T0_00201 Hersteller : PanJit Semiconductor Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH