
auf Bestellung 2585 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 2.11 EUR |
10+ | 1.34 EUR |
100+ | 0.89 EUR |
500+ | 0.7 EUR |
1000+ | 0.65 EUR |
3000+ | 0.55 EUR |
6000+ | 0.52 EUR |
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Technische Details PJQ5528-AU_R2_002A1 Panjit
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 244A; 15.6W, Kind of package: reel; tape, Case: DFN5060-8, Kind of channel: enhancement, Type of transistor: N-MOSFET, Mounting: SMD, Gate charge: 11nC, On-state resistance: 6mΩ, Power dissipation: 15.6W, Gate-source voltage: ±20V, Drain-source voltage: 30V, Drain current: 61A, Pulsed drain current: 244A, Application: automotive industry, Polarisation: unipolar, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote PJQ5528-AU_R2_002A1
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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PJQ5528-AU_R2_002A1 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 244A; 15.6W Kind of package: reel; tape Case: DFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Gate charge: 11nC On-state resistance: 6mΩ Power dissipation: 15.6W Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 61A Pulsed drain current: 244A Application: automotive industry Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PJQ5528-AU_R2_002A1 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 244A; 15.6W Kind of package: reel; tape Case: DFN5060-8 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Gate charge: 11nC On-state resistance: 6mΩ Power dissipation: 15.6W Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 61A Pulsed drain current: 244A Application: automotive industry Polarisation: unipolar |
Produkt ist nicht verfügbar |