PJX138L_R1_00002 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 160mA; Idm: 0.8A; 223W
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 0.8A
Drain current: 0.16A
Gate charge: 0.7nC
Power dissipation: 223W
On-state resistance: 4.2Ω
Gate-source voltage: ±20V
Case: SOT563
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 160mA; Idm: 0.8A; 223W
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 0.8A
Drain current: 0.16A
Gate charge: 0.7nC
Power dissipation: 223W
On-state resistance: 4.2Ω
Gate-source voltage: ±20V
Case: SOT563
Kind of package: reel; tape
Kind of channel: enhancement
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Technische Details PJX138L_R1_00002 PanJit Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 60V; 160mA; Idm: 0.8A; 223W, Mounting: SMD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 60V, Pulsed drain current: 0.8A, Drain current: 0.16A, Gate charge: 0.7nC, Power dissipation: 223W, On-state resistance: 4.2Ω, Gate-source voltage: ±20V, Case: SOT563, Kind of package: reel; tape, Kind of channel: enhancement.