PMPB20SNAX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: PMPB20SNA - 40V, N-CHANNEL TRENC
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V
Power Dissipation (Max): 2.27W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 20 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5323+ | 0.10 EUR |
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Technische Details PMPB20SNAX Nexperia USA Inc.
Description: PMPB20SNA - 40V, N-CHANNEL TRENC, Packaging: Bulk, Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V, Power Dissipation (Max): 2.27W (Ta), 15W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DFN2020MD-6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 20 V.
Weitere Produktangebote PMPB20SNAX
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| PMPB20SNAX | Hersteller : NEXPERIA |
Description: NEXPERIA - PMPB20SNAX - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMPB20SNAX | Hersteller : NEXPERIA |
40 V, N-channel Trench MOSFET |
Produkt ist nicht verfügbar |