PMV100XPEA215 NXP Semiconductors
Hersteller: NXP SemiconductorsDescription: NEXPERIA PMV100 - P-CHANNEL MOSF
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 128mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 463mW (Ta), 4.45W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 10 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6693+ | 0.065 EUR |
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Technische Details PMV100XPEA215 NXP Semiconductors
Description: NEXPERIA PMV100 - P-CHANNEL MOSF, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), Rds On (Max) @ Id, Vgs: 128mOhm @ 2.4A, 4.5V, Power Dissipation (Max): 463mW (Ta), 4.45W (Tc), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: SOT-23, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 10 V.