PMV100XPEA215 NXP Semiconductors
Hersteller: NXP Semiconductors
Description: NEXPERIA PMV100 - P-CHANNEL MOSF
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 463mW (Ta), 4.45W (Tc)
Rds On (Max) @ Id, Vgs: 128mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 6693+ | 0.063 EUR |
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Technische Details PMV100XPEA215 NXP Semiconductors
Description: NEXPERIA PMV100 - P-CHANNEL MOSF, Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Power Dissipation (Max): 463mW (Ta), 4.45W (Tc), Rds On (Max) @ Id, Vgs: 128mOhm @ 2.4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk.