Produkte > POWERSEM > PSHI 25/12

PSHI 25/12 POWERSEM

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Hersteller: POWERSEM
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; THT
Max. off-state voltage: 1.2kV
Electrical mounting: THT
Mechanical mounting: screw
Case: ECO-PAC 2
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: motors
Collector current: 21A
Gate-emitter voltage: ±20V
Pulsed collector current: 35A
Power dissipation: 130W
Topology: H-bridge

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Technische Details PSHI 25/12 POWERSEM

Category: IGBT modules, Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; THT, Max. off-state voltage: 1.2kV, Electrical mounting: THT, Mechanical mounting: screw, Case: ECO-PAC 2, Semiconductor structure: transistor/transistor, Type of semiconductor module: IGBT, Application: motors, Collector current: 21A, Gate-emitter voltage: ±20V, Pulsed collector current: 35A, Power dissipation: 130W, Topology: H-bridge.