PSMN2R2-100SSEJ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PSMN2R2-100SSE/SOT1235/LFPAK88
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 255A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 34776 pF @ 50 V
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Technische Details PSMN2R2-100SSEJ Nexperia USA Inc.
Description: PSMN2R2-100SSE/SOT1235/LFPAK88, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 255A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK88 (SOT1235), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 34776 pF @ 50 V.